Piezotronic Logic Circuits and Operations. Piezotronic Electromechanical Memories. Theory of Piezo-Phototronics. Piezo-Phototronic Effect on Solar Cells.
Piezotronics and piezo-phototronics for adaptive electronics and optoelectronics
Piezo-Phototronic Effect on Photodetector. Back Matter Pages About this book Introduction The fundamental principle of piezotronics and piezo-phototronics were introduced by Wang in and , respectively. To browse Academia.
Alternatively, the piezoelectric potential piezopotential is created in gate voltage can be replaced by the piezopotential the crystal by applying a stress. This behavior of charge carriers is significant due to their type of device is called piezotronic device as multiple functionalities of piezoelectricity, triggered or driven by a mechanical deformation semiconductor and photon excitation. In this article action.
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Alternatively, for a device with Schottky a brief review about piezoelectric effect, piezotronics contacts at either or both of the source or drain, by and piezophototronics are discussed. Introduction characteristics, leading to the piezo-phototronic effect. This paper is to review the piezoelectric effect Piezoelectricity, a phenomenon known for centuries, and its application in piezotronics and piezo- is an effect that is about the production of electrical phototronics..
The most well known material that has piezoelectric 2. Piezoelectric effect effect is the provskite structured Pb Zr, Ti O3 PZT , which has found huge applications in A piezoelectric substance is one that produces an electromechanical sensors, actuators and energy electric charge when a mechanical stress is applied generators. But PZT is an electric insulator and it is the substance is squeezed or stretched. Conversely, less useful for building electronic devices. Wurtzite applied. To explain this, we have to look have piezoelectric properties but they are not at the individual molecules that make up the crystal.
Therefore, the study of wurtzite charged, and is called a dipole. This is a result of the structures is mainly in the electronic and photonic atoms that make up the molecule and the way the communities due their semiconductor and photon molecules are shaped. The polar axis is an imaginary excitation properties. In a monocrystal the polar axes of all effect, piezopotential generated in the wurtzite of the dipoles lie in one direction.
One of the crystal at any point, the resultant polar axes of the most common electronic devices is a single channel two pieces would lie in the same direction as the field effect transistor FET based on a original. In a polycrystal, there are different regions semiconductor nanowire NW , in which a source within the material that have a different polar axis.
amelunxen.de/plugins/19-chloroquine-vs.php It and drain are located at the two ends of the device, is asymmetrical because there is no point at which and a gate voltage is the crystal could be cut that would leave the two remaining pieces with the same resultant polar axis. The heat allows the molecules to move reduce the effective height of the SB as a result of more freely and the electric field forces all of the charge redistribution Fig.
The piezoelectric effect can now be Once a strain is created in the semiconductor that observed in the crystal. If stretched, a positive piezopotential reduces the barrier height.
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The polarity of the piezopotential is dictated by the Conversely, if a voltage is applied the material will direction of the c-axis for ZnO. The role played by deform. If an AC signal is applied the metal—semiconductor M—S contact. By then the material will vibrate at the same frequency considering the change in piezopotential polarity by as the signal e.
Piezotronics and piezophototronics controlled by the magnitude of the strain and the sign effect of strain. This is the core of piezotronics.
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When a p- type and a n-type semiconductors form a junction, A most simple FET is a two end bonded the holes in the p-type side and the electrons in the n- semiconductor wire, in which the two electric type side tend to redistribute to balance the local contacts at the ends are the source and drain, and the potential, the interdiffusion and recombination of the gate voltage can be applied either at the top of the electrons and holes in the junction region forms a wire through a gate electrode or at its bottom on the charge depletion zone Fig.
Once an external substrate.
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When a ZnO NW is strained axially along potential is applied across the junction with the n- its length, two typical effects are observed. One is type side positive, the width of the charge depletion the piezoresistance effect, which is introduced zone is enlarged, thus, few charge carriers flow because of the change in bandgap and possibly across it.
But once the p-type side is applied with a density of states in the conduction band. On the depletion zone, charge carrier can flow across the other hand, piezopotential is created along its length. For an axial strained NW, the piezoelectric potential continuously drops from one side of the NW to the other, which means that the electron energy continuously increases from one side to the other.
Meanwhile, the Fermi level will be flat all over the NW when equilibrium is achieved, since there is no external electrical field. This is the piezotronic effect. A better understanding about the piezotronic effect is to compare it with the most fundamental structure in semiconductor devices: Schottky contact and p—n junction. He is the leader figure in ZnO nanostructure research. His discovery and breakthroughs in developing nanogenerators establish the principle and technological road map for harvesting mechanical energy from environment and biological systems for powering a personal electronics.
His research on self-powered nanosystems has inspired the worldwide effort in academia and industry for studying energy for micro-nano-systems, which is now a distinct disciplinary in energy research and future sensor networks. He coined and pioneered the field of piezotronics and piezo-phototronics by introducing piezoelectric potential gated charge transport process in fabricating new electronic and optoelectronic devices.
Wang is a pioneer and world leader in nanoscience and nanotechnology for his outstanding creativity and productivity. He has authored and co-authored 5 scientific reference and textbooks and over peer reviewed journal articles 14 in Nature and Science, 6 in Nature sister journals , 45 review papers and book chapters, edited and co-edited 14 volumes of books on nanotechnology, and held 32 patents.
Wang is the world's top 5 most cited authors in nanotechnology. His entire publications have been cited for over 50, times.
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The H-index of his publications is He has delivered over keynote, plenary and invited talks at international and national conferences as well as universities and research institutes worldwide. He is an honorable professor of over 10 universities in China and Europe.
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